We present here 40 nm vertical MOSFETs fabricated using the most standard CMOS process flow. At the expense of four additional (but still conventional) steps, both planar and vertical devices can be ...

Two approaches to a 1-aryl-4-trifluoromethyltriazole are described. Initially, a late-stage trifluoromethylation of the corresponding 1-aryl-4-iodotriazole using methyl fluorosulfonyldifluoroacetate ...