This application note presents the ISL73096RH/ISL73127RH/ISL73128RH transistor arrays and focuses on designing RF amplifiers employing these featured transistor ...
Abstract— Today’s on-chip Analog/Mixed-Signal and RF (A/RF) systems have reached a limit of size and complexity where transistor-level SPICE and FastSPICE simulation approaches cannot deliver a ...
Freescale Semiconductor has introduced an RF power LDMOS transistor that combines the industry’s highest output power and efficiency with the greatest ruggedness of any competitive device in its class ...
LEUVEN (Belgium), June 12, 2025— Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile ...
Active inductors have emerged as a transformative component in CMOS radio frequency (RF) circuit design, effectively replacing traditional passive inductors with active semiconductor networks. By ...
Component distributor Richardson RFPD has prepared a couple of documents on the options available for designers of RF amplifiers. Rather than in-depth, they are a useful introduction to the different ...
A technique that uses hydrogen to improve transistor performance on real-world graphene devices has been demonstrated on the wafer-scale. Researchers have demonstrated a 3x improvement in electron ...
Ampleon’s transistor offers a frequency response of 0 to 650 MHz in an air-cavity ceramic package. Ampleon has released the first of a family of RF power devices based on its Advanced Rugged ...
In September 2010, a UCLA research team reported that they had overcome some of these difficulties and were able to fabricate graphene transistors with unparalleled speed. These transistors used a ...
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