Kioxia says it has developed highly stackable oxide-semiconductor channel transistors capable of supporting high-density 3D DRAM. This development could lead to cheaper and faster memory by lowering ...
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Intel shares slide after report says Nvidia paused testing of 18A chip process
Intel’s INTC stock plunged by 2.5% on Wednesday after Reuters alleged that Nvidia had paused testing of the 18A chip ...
There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...
Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...
Integrated circuit (IC) sizes continue to grow as they meet the compute requirements of cutting-edge applications such as artificial intelligence (AI), autonomous driving, and data centers. As design ...
An international team of researchers from Queen Mary University of London, the University of Oxford, Lancaster University, and the University of Waterloo have developed a new single-molecule ...
Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...
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