Microchip has introduced Schottky diode power modules in 700, 1200 and 1700V variants. They come in a choice of packaging and current ratings, as well as in various topologies including dual diode, ...

Microchip has added 700V discrete SiC mosfets and both 700V and 1.2kV discrete SiC Schottky diodes, totalling 34 parts, to its portfolio of SiC power modules. “Microchip is one of the few suppliers to ...

Cree, Inc., a market leader in silicon carbide (SiC) power devices, has introduced a series of packaged diodes that deliver the industry’s highest blocking voltage available in SiC Schottky technology ...

Low forward voltage (V F) minimizing conduction losses, enhancing overall power efficiency. These characteristics make them ideal for high-speed switching circuits. The high-performance SiC diodes are ...

Vishay Intertechnology VSH recently launched Gen 3 1200 V silicon carbide (SiC) Schottky diodes. The diodes boast high surge current robustness, low forward voltage drop, capacitive charge, and ...

Advanced Power Technology’s new line of SiC ZERO RECOVERY Schottky Diodes is offered in plastic and hermetic packages. Packages include D 2, D 3, TO-220, TO-247, and SOT-227 as well as hermetic TO-257 ...

With the increasing demand for improving system efficiencies, the development of the low loss, high current, high voltage, rugged power modules for high frequency power electronic applications is of ...

CHANDLER, Ariz., Oct. 28, 2020 (GLOBE NEWSWIRE) -- As vehicle electrification continues rapid growth worldwide, innovative power technologies such as Silicon Carbide (SiC) are required for ...

This new module is the first to incorporate a power semiconductor comprised of just an SiC MOSFET, increasing the rated current to 180A for broader applicability while contributing to lower power ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...