Freescale Semiconductor has introduced an RF power LDMOS transistor that combines the industry’s highest output power and efficiency with the greatest ruggedness of any competitive device in its class ...

Nowadays, laterally diffused metal oxide semiconductor (LDMOS) transistors are widely used for RF Power Amplification and in many applications. A simplified circuit of an LDMOS amplifier bias circuit ...

NXP Semiconductors and Freescale have made additions to their rf power transistor portfolios in advance of the forthcoming International Microwave Symposium. NXP has expanded its eighth generation ...

Cree Semiconductor Re-Enters High-Power RF Transistor Market SUMMARY HED: Gallium nitride transistors deliver 300 Watts at 2.7 GHz At the start of the DTV transition, Westinghouse and Cree partnered ...

Austin, June 16, 2025 (GLOBE NEWSWIRE) -- LDMOS RF Power Transistor Market Size & Growth Insights: According to the SNS Insider,“The LDMOS RF Power Transistor Market size was valued at USD 1.31 ...

The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

PHOENIX--(BUSINESS WIRE)--Freescale Semiconductor (NYSE: FSL) today introduced its first gallium nitride (GaN) RF power transistor for cellular base stations. The new A2G22S160-01S delivers ...

Ampleon’s transistor offers a frequency response of 0 to 650 MHz in an air-cavity ceramic package. Ampleon has released the first of a family of RF power devices based on its Advanced Rugged ...

Ampleon has released the first of a family of RF power devices based upon its Advanced Rugged Technology (ART) derivative of its proven 9th generation high voltage LDMOS process technology. The ...

NXP was showing a 1.5kW LDMOS power transistor in a plastic package at European Microwave Week in London. The device, the MRF1K50N, has 30% lower thermal resistance compared with the existing ceramic ...