A semiconductor amplifying device with up to 100-meg input impedance is now available from an American manufacturer. (Some French firms already have announced field-effect devices.) Crystalonics, ...
A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, Johannes Kepler University, Universidad de Granada, and Max Planck Institute for ...
onsemi to Acquire Silicon Carbide JFET Technology to Enhance Its Power Portfolio for AI Data Centers
SCOTTSDALE, Ariz.--(BUSINESS WIRE)--onsemi (Nasdaq: ON) today announced that it has entered into an agreement to acquire the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology ...
In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...
Onsemi announced on December 9, 2024, that it has agreed to acquire Qorvo's Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide ...
With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...
(RTTNews) - Wednesday, onsemi (ON) announced the completion of its acquisition of the Silicon Carbide Junction Field-Effect Transistor business, including the United Silicon Carbide subsidiary, from ...
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