Gallium nitride (GaN) is breaking out in the world of power electronics. GaN stands out for its superior physical properties, including high electron mobility, wide bandgap, and high thermal ...

Gallium nitride (GaN) and its wide bandgap cousin silicon carbide (SiC) have started to disrupt power electronics. Ironically, just a few years ago, GaN was considered useless as a semiconductor, ...

How to improve power-converter density and efficiency using GaN HEMT in a half-bridge configuration. What’s the difference between Direct-Drive GaN and cascoded D-mode GaN designs? Savvy power design ...

CHRIS SCHODT: Silicon is over, or is it? Probably not. But there is some exciting tech out there that may change your devices all the way from laptops to electric cars. Welcome to "Upscaled," our ...

A research team led by Prof. Kevin Chen of Department of Electronic and Computer Engineering at The Hong Kong University of Science and Technology (HKUST) has recently inducted a new member, the ...

Next-generation photovoltaic inverters not only have to enable electricity to be fed into the grid but also act to support network operations. With this in mind, a consortium of German research ...